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  • Artigo de periodico

    Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)

    Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da

    Source: Journal of Applied Physics. Unidades: IFSC, IF

    Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES

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      SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 09 maio 2024.

    • APA

      Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962

    • NLM

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 maio 09 ] Available from: https://doi.org/10.1063/5.0187962

    • Vancouver

      Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2024 maio 09 ] Available from: https://doi.org/10.1063/5.0187962

  • Artigo de periodico

    Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel (2024)

    Pusep, Yuri ; Teodoro, Marcio Daldin ; Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Gusev, Gennady ; Bakarov, Askhat

    Source: Physical Review B. Unidades: IFSC, IF

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO, FÍSICA MODERNA

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      PUSEP, Yuri et al. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, v. 109, n. 7, p. 075429-1-075429-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.075429. Acesso em: 09 maio 2024.

    • APA

      Pusep, Y., Teodoro, M. D., Patricio, M. A. T., Jacobsen, G. M., Gusev, G., & Bakarov, A. (2024). Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel. Physical Review B, 109( 7), 075429-1-075429-6. doi:10.1103/PhysRevB.109.075429

    • NLM

      Pusep Y, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429

    • Vancouver

      Pusep Y, Teodoro MD, Patricio MAT, Jacobsen GM, Gusev G, Bakarov A. Magnetic field effect on diffusion of photogenerated holes in a mesoscopic GaAs channel [Internet]. Physical Review B. 2024 ; 109( 7): 075429-1-075429-6.[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.075429

  • Artigo de periodico

    Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel (2024)

    Patricio, Marco Antonio Tito ; Jacobsen, Gabriel Marques ; Teodoro, Marcio Daldin ; Gusev, Gennady ; Bakarov, Askhat ; Pusep, Yuri

    Source: Physical Review B. Unidades: IF, IFSC

    Subjects: POÇOS QUÂNTICOS, SEMICONDUTORES, CAMPO MAGNÉTICO

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      PATRICIO, Marco Antonio Tito et al. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, v. 109, n. 12, p. L121401-1-L121401-6, 2024Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.109.L121401. Acesso em: 09 maio 2024.

    • APA

      Patricio, M. A. T., Jacobsen, G. M., Teodoro, M. D., Gusev, G., Bakarov, A., & Pusep, Y. (2024). Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel. Physical Review B, 109( 12), L121401-1-L121401-6. doi:10.1103/PhysRevB.109.L121401

    • NLM

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep Y. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401

    • Vancouver

      Patricio MAT, Jacobsen GM, Teodoro MD, Gusev G, Bakarov A, Pusep Y. Hydrodynamics of electron-hole fluid photogenerated in a mesoscopic two-dimensional channel [Internet]. Physical Review B. 2024 ; 109( 12): L121401-1-L121401-6.[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.109.L121401

  • Trabalho de evento

    Compact modeling of transition metal dichalcogenide ballistic transistors (2023)

    Souza, Adelcio Marques de; Celino, Daniel Ricardo; Romero, Murilo Araujo

    Source: Proceedings. Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro. Unidade: EESC

    Subjects: FILMES FINOS, SEMICONDUTORES, ENGENHARIA MECÂNICA

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      SOUZA, Adelcio Marques de e CELINO, Daniel Ricardo e ROMERO, Murilo Araujo. Compact modeling of transition metal dichalcogenide ballistic transistors. 2023, Anais.. Piscataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2023. Disponível em: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479. Acesso em: 09 maio 2024.

    • APA

      Souza, A. M. de, Celino, D. R., & Romero, M. A. (2023). Compact modeling of transition metal dichalcogenide ballistic transistors. In Proceedings. Piscataway, NJ, USA: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1109/SBMicro60499.2023.10302479

    • NLM

      Souza AM de, Celino DR, Romero MA. Compact modeling of transition metal dichalcogenide ballistic transistors [Internet]. Proceedings. 2023 ;[citado 2024 maio 09 ] Available from: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479

    • Vancouver

      Souza AM de, Celino DR, Romero MA. Compact modeling of transition metal dichalcogenide ballistic transistors [Internet]. Proceedings. 2023 ;[citado 2024 maio 09 ] Available from: https://dx.doi.org/10.1109/SBMicro60499.2023.10302479

  • Trabalho de evento-resumo

    Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion (2023)

    Nogueira, Francisco Guilherme Esteves; Faria, Ana Luiza A.; Torres, Juliana A.; Ribeiro, Lucas S.; Centurion, Higor Andrade ; Ribeiro, Caue ; Gonçalves, Renato Vitalino

    Source: Program. Conference titles: Materials Research Society Fall Meeting and Exhibit. Unidade: IFSC

    Subjects: FOTOCATÁLISE, NIÓBIO, SEMICONDUTORES, NANOPARTÍCULAS

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      NOGUEIRA, Francisco Guilherme Esteves et al. Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion. 2023, Anais.. Warrendale: Materials Research Society - MRS, 2023. Disponível em: https://repositorio.usp.br/directbitstream/3456f4bc-5695-4a12-a1a7-4a570c23332b/3179260.pdf. Acesso em: 09 maio 2024.

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      Nogueira, F. G. E., Faria, A. L. A., Torres, J. A., Ribeiro, L. S., Centurion, H. A., Ribeiro, C., & Gonçalves, R. V. (2023). Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion. In Program. Warrendale: Materials Research Society - MRS. Recuperado de https://repositorio.usp.br/directbitstream/3456f4bc-5695-4a12-a1a7-4a570c23332b/3179260.pdf

    • NLM

      Nogueira FGE, Faria ALA, Torres JA, Ribeiro LS, Centurion HA, Ribeiro C, Gonçalves RV. Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion [Internet]. Program. 2023 ;[citado 2024 maio 09 ] Available from: https://repositorio.usp.br/directbitstream/3456f4bc-5695-4a12-a1a7-4a570c23332b/3179260.pdf

    • Vancouver

      Nogueira FGE, Faria ALA, Torres JA, Ribeiro LS, Centurion HA, Ribeiro C, Gonçalves RV. Improved photocatalytic efficiency of Nb2O5-based semiconductors through Cu and Fe nanoparticles depositions for CO2 photoconversion [Internet]. Program. 2023 ;[citado 2024 maio 09 ] Available from: https://repositorio.usp.br/directbitstream/3456f4bc-5695-4a12-a1a7-4a570c23332b/3179260.pdf

  • Artigo de periodico

    Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties (2023)

    Pereira, Myllena Souza; Araújo, Luis Octávio de; Daros, Mikaela; Torres, Bruno Bassi Millan ; Coutinho, Douglas José ; Macedo, Andreia Gerniski ; Faria, Roberto Mendonça ; Rodrigues, Paula Cristina

    Source: Journal of Applied Polymer Science. Unidade: IFSC

    Subjects: POLÍMEROS (MATERIAIS), SEMICONDUTORES, ÓPTICA ELETRÔNICA (PROPRIEDADES)

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      PEREIRA, Myllena Souza et al. Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties. Journal of Applied Polymer Science, v. 140, n. 39, p. e54448-1-e54448-11, 2023Tradução . . Disponível em: https://doi.org/10.1002/app.54448. Acesso em: 09 maio 2024.

    • APA

      Pereira, M. S., Araújo, L. O. de, Daros, M., Torres, B. B. M., Coutinho, D. J., Macedo, A. G., et al. (2023). Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties. Journal of Applied Polymer Science, 140( 39), e54448-1-e54448-11. doi:10.1002/app.54448

    • NLM

      Pereira MS, Araújo LO de, Daros M, Torres BBM, Coutinho DJ, Macedo AG, Faria RM, Rodrigues PC. Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties [Internet]. Journal of Applied Polymer Science. 2023 ; 140( 39): e54448-1-e54448-11.[citado 2024 maio 09 ] Available from: https://doi.org/10.1002/app.54448

    • Vancouver

      Pereira MS, Araújo LO de, Daros M, Torres BBM, Coutinho DJ, Macedo AG, Faria RM, Rodrigues PC. Influence of the π-bridge and heteroatom on fluorene-based donor-acceptor polymers: structure and optoelectronic properties [Internet]. Journal of Applied Polymer Science. 2023 ; 140( 39): e54448-1-e54448-11.[citado 2024 maio 09 ] Available from: https://doi.org/10.1002/app.54448

  • Artigo de periodico

    Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications (2023)

    Paula, Kelly Tasso de ; Santos, Sabrina Nicoleti Carvalho dos ; Facure, Murilo Henrique Moreira ; Araújo, Francineide Lopes de ; Andrade, Marcelo Barbosa de ; Corrêa, Daniel Souza ; Mendonça, Cleber Renato

    Source: Journal of Applied Physics. Unidade: IFSC

    Subjects: LASER, NANOPARTÍCULAS, SEMICONDUTORES, FILMES FINOS, ÓPTICA ELETRÔNICA

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      PAULA, Kelly Tasso de et al. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, v. 133, n. 5, p. 053103-1-053103-10, 2023Tradução . . Disponível em: https://doi.org/10.1063/5.0137926. Acesso em: 09 maio 2024.

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      Paula, K. T. de, Santos, S. N. C. dos, Facure, M. H. M., Araújo, F. L. de, Andrade, M. B. de, Corrêa, D. S., & Mendonça, C. R. (2023). Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications. Journal of Applied Physics, 133( 5), 053103-1-053103-10. doi:10.1063/5.0137926

    • NLM

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 maio 09 ] Available from: https://doi.org/10.1063/5.0137926

    • Vancouver

      Paula KT de, Santos SNC dos, Facure MHM, Araújo FL de, Andrade MB de, Corrêa DS, Mendonça CR. Fabrication of interdigitated electrodes of graphene oxide/silica by femtosecond laser-induced forward transfer for sensing applications [Internet]. Journal of Applied Physics. 2023 ; 133( 5): 053103-1-053103-10.[citado 2024 maio 09 ] Available from: https://doi.org/10.1063/5.0137926

  • Trabalho de evento

    Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms (2023)

    Canales, Bruno Godoy; Martino, João Antonio ; Agopian, Paula Ghedini Der

    Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: EP

    Subjects: TRANSISTORES, SEMICONDUTORES

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      CANALES, Bruno Godoy e MARTINO, João Antonio e AGOPIAN, Paula Ghedini Der. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms. 2023, Anais.. [Piscataway]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302593. Acesso em: 09 maio 2024.

    • APA

      Canales, B. G., Martino, J. A., & Agopian, P. G. D. (2023). Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms. In SBMicro. [Piscataway]: IEEE. doi:10.1109/SBMicro60499.2023.10302593

    • NLM

      Canales BG, Martino JA, Agopian PGD. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms [Internet]. SBMicro. 2023 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302593

    • Vancouver

      Canales BG, Martino JA, Agopian PGD. Influence of gate insulator and AlGaN barrier layer on MISHEMT conduction mechanisms [Internet]. SBMicro. 2023 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302593

  • Trabalho de evento

    Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K (2023)

    Perina, Welder Fernandes; Martino, João Antonio ; Simoen, Eddy ; Peralagu, Uthayasankaran; Collaert, Nadine ; Agopian, Paula Ghedini Der

    Source: SBMicro. Conference titles: Symposium on Microelectronics Technology and Devices. Unidade: EP

    Subjects: TRANSISTORES, SEMICONDUTORES

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      PERINA, Welder Fernandes et al. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. 2023, Anais.. [Piscataway, N.J.]: IEEE, 2023. Disponível em: https://doi.org/10.1109/SBMicro60499.2023.10302604. Acesso em: 09 maio 2024.

    • APA

      Perina, W. F., Martino, J. A., Simoen, E., Peralagu, U., Collaert, N., & Agopian, P. G. D. (2023). Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K. In SBMicro. [Piscataway, N.J.]: IEEE. doi:10.1109/SBMicro60499.2023.10302604

    • NLM

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604

    • Vancouver

      Perina WF, Martino JA, Simoen E, Peralagu U, Collaert N, Agopian PGD. Study of the effect of multiple conductions on threshold voltage in a MIS-HEMT from 450 K down to 200 K [Internet]. SBMicro. 2023 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMicro60499.2023.10302604

  • Trabalho de evento-resumo

    Controlling the optical properties of matter by using metasurfaces (2023)

    Marega Júnior, Euclydes

    Source: Abstracts. Conference titles: Atomic, Molecular, & Optical Events. Unidade: IFSC

    Subjects: MATERIAIS NANOESTRUTURADOS, ÓPTICA QUÂNTICA, SEMICONDUTORES

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      MAREGA JÚNIOR, Euclydes. Controlling the optical properties of matter by using metasurfaces. 2023, Anais.. College Station: Texas A&M University, 2023. Disponível em: https://physics.tamu.edu/events/controlling-the-optical-properties-of-matter-by-using-metasurfaces/. Acesso em: 09 maio 2024.

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      Marega Júnior, E. (2023). Controlling the optical properties of matter by using metasurfaces. In Abstracts. College Station: Texas A&M University. Recuperado de https://physics.tamu.edu/events/controlling-the-optical-properties-of-matter-by-using-metasurfaces/

    • NLM

      Marega Júnior E. Controlling the optical properties of matter by using metasurfaces [Internet]. Abstracts. 2023 ;[citado 2024 maio 09 ] Available from: https://physics.tamu.edu/events/controlling-the-optical-properties-of-matter-by-using-metasurfaces/

    • Vancouver

      Marega Júnior E. Controlling the optical properties of matter by using metasurfaces [Internet]. Abstracts. 2023 ;[citado 2024 maio 09 ] Available from: https://physics.tamu.edu/events/controlling-the-optical-properties-of-matter-by-using-metasurfaces/

  • Artigo de periodico

    Crystal structure and electrical and optical properties of two-dimensional group-IV monochalcogenides (2023)

    Querne, Mateus Bazan Peters ; Bracht, Jean M; Silva, Juarez Lopes Ferreira da ; Janotti, Anderson; Lima, Matheus P

    Source: Physical Review B. Unidade: IQSC

    Subjects: SEMICONDUTORES, CRISTALOGRAFIA FÍSICA

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      QUERNE, Mateus Bazan Peters et al. Crystal structure and electrical and optical properties of two-dimensional group-IV monochalcogenides. Physical Review B, p. 085409, 2023Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.108.085409. Acesso em: 09 maio 2024.

    • APA

      Querne, M. B. P., Bracht, J. M., Silva, J. L. F. da, Janotti, A., & Lima, M. P. (2023). Crystal structure and electrical and optical properties of two-dimensional group-IV monochalcogenides. Physical Review B, 085409. doi:10.1103/PhysRevB.108.085409

    • NLM

      Querne MBP, Bracht JM, Silva JLF da, Janotti A, Lima MP. Crystal structure and electrical and optical properties of two-dimensional group-IV monochalcogenides [Internet]. Physical Review B. 2023 ; 085409.[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.108.085409

    • Vancouver

      Querne MBP, Bracht JM, Silva JLF da, Janotti A, Lima MP. Crystal structure and electrical and optical properties of two-dimensional group-IV monochalcogenides [Internet]. Physical Review B. 2023 ; 085409.[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.108.085409

  • Trabalho de evento

    On the importance of atom probe tomography for the development of new nanoscale devices (2022)

    Santos, Thales Borrely dos ; Huang, Tao-Yu; Yang, Yu-Chen; Goldman, Rachel S; Quivy, Alain André

    Conference titles: Symposium on Microelectronics Technology and Devices (SBMicro). Unidade: IF

    Subjects: TOMOGRAFIA, SEMICONDUTORES

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      SANTOS, Thales Borrely dos et al. On the importance of atom probe tomography for the development of new nanoscale devices. 2022, Anais.. New York: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881039. Acesso em: 09 maio 2024.

    • APA

      Santos, T. B. dos, Huang, T. -Y., Yang, Y. -C., Goldman, R. S., & Quivy, A. A. (2022). On the importance of atom probe tomography for the development of new nanoscale devices. In . New York: IEEE. doi:10.1109/SBMICRO55822.2022.9881039

    • NLM

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039

    • Vancouver

      Santos TB dos, Huang T-Y, Yang Y-C, Goldman RS, Quivy AA. On the importance of atom probe tomography for the development of new nanoscale devices [Internet]. 2022 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881039

  • Trabalho de evento

    A method for deposition rate estimation on a low-cost home-built DC sputter system (2022)

    Pinto, H. M.; Jasinevicius, Renato Goulart; Cirino, G. A.

    Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro. Unidade: EESC

    Subjects: FILMES FINOS, SEMICONDUTORES, ENGENHARIA MECÂNICA

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      PINTO, H. M. e JASINEVICIUS, Renato Goulart e CIRINO, G. A. A method for deposition rate estimation on a low-cost home-built DC sputter system. 2022, Anais.. Piscataway, NJ, USA: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881038. Acesso em: 09 maio 2024.

    • APA

      Pinto, H. M., Jasinevicius, R. G., & Cirino, G. A. (2022). A method for deposition rate estimation on a low-cost home-built DC sputter system. In . Piscataway, NJ, USA: IEEE. doi:10.1109/SBMICRO55822.2022.9881038

    • NLM

      Pinto HM, Jasinevicius RG, Cirino GA. A method for deposition rate estimation on a low-cost home-built DC sputter system [Internet]. 2022 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881038

    • Vancouver

      Pinto HM, Jasinevicius RG, Cirino GA. A method for deposition rate estimation on a low-cost home-built DC sputter system [Internet]. 2022 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881038

  • Trabalho de evento-resumo periodico

    Higher-order topological phases in point-group symmetric superconductors (2022)

    Pupim, Lucas; Gilbert, Matthew J.; Egues, José Carlos

    Source: Bulletin of the American Physical Society. Conference titles: APS March Meeting. Unidade: IFSC

    Subjects: SUPERCONDUTIVIDADE, SEMICONDUTORES

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      PUPIM, Lucas e GILBERT, Matthew J. e EGUES, José Carlos. Higher-order topological phases in point-group symmetric superconductors. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Disponível em: https://meetings/Meeting/MAR22/Session/T10.13. Acesso em: 09 maio 2024. , 2022

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      Pupim, L., Gilbert, M. J., & Egues, J. C. (2022). Higher-order topological phases in point-group symmetric superconductors. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Recuperado de https://meetings/Meeting/MAR22/Session/T10.13

    • NLM

      Pupim L, Gilbert MJ, Egues JC. Higher-order topological phases in point-group symmetric superconductors [Internet]. Bulletin of the American Physical Society. 2022 ; 67( 3):[citado 2024 maio 09 ] Available from: https://meetings/Meeting/MAR22/Session/T10.13

    • Vancouver

      Pupim L, Gilbert MJ, Egues JC. Higher-order topological phases in point-group symmetric superconductors [Internet]. Bulletin of the American Physical Society. 2022 ; 67( 3):[citado 2024 maio 09 ] Available from: https://meetings/Meeting/MAR22/Session/T10.13

  • Trabalho de evento

    Experimental behavior of line-TFET applied to low-dropout voltage regulator (2022)

    Silva, Wenita de Lima; Agopian, Paula Ghedini Der ; Martino, João Antonio

    Source: SBMICRO: proceedings. Conference titles: Symposium on Microelectronics Technology. Unidade: EP

    Subjects: SEMICONDUTORES, ESTABILIDADE, CIRCUITOS ANALÓGICOS

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      SILVA, Wenita de Lima e AGOPIAN, Paula Ghedini Der e MARTINO, João Antonio. Experimental behavior of line-TFET applied to low-dropout voltage regulator. 2022, Anais.. [s.L.]: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881041. Acesso em: 09 maio 2024.

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      Silva, W. de L., Agopian, P. G. D., & Martino, J. A. (2022). Experimental behavior of line-TFET applied to low-dropout voltage regulator. In SBMICRO: proceedings. [s.L.]: IEEE. doi:10.1109/SBMICRO55822.2022.9881041

    • NLM

      Silva W de L, Agopian PGD, Martino JA. Experimental behavior of line-TFET applied to low-dropout voltage regulator [Internet]. SBMICRO: proceedings. 2022 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881041

    • Vancouver

      Silva W de L, Agopian PGD, Martino JA. Experimental behavior of line-TFET applied to low-dropout voltage regulator [Internet]. SBMICRO: proceedings. 2022 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881041

  • Artigo de periodico

    Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state (2022)

    Stegerer, Dominik; Pracht, Martin ; Günther, Florian Steffen ; Sun, Hengda; Preis, Kevin; Zerson, Mario; Maftuhin, Wafa; Tan, Wen Liang; Kroon, Renee ; McNeill, Christopher R. ; Fabiano, Simone ; Walter, Michael ; Biskup, Till ; Gemming, Sibylle; Magerle, Robert ; Müller, Christian ; Sommer, Michael

    Source: Macromolecules. Unidade: IFSC

    Subjects: SEMICONDUTORES, NANOELETRÔNICA, CONDUTIVIDADE ELÉTRICA, POLÍMEROS (MATERIAIS), FILMES FINOS

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      STEGERER, Dominik et al. Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state. Macromolecules, v. 55, n. 12, p. 4979-4994 + supporting information: 1-36, 2022Tradução . . Disponível em: https://doi.org/10.1021/acs.macromol.2c00655. Acesso em: 09 maio 2024.

    • APA

      Stegerer, D., Pracht, M., Günther, F. S., Sun, H., Preis, K., Zerson, M., et al. (2022). Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state. Macromolecules, 55( 12), 4979-4994 + supporting information: 1-36. doi:10.1021/acs.macromol.2c00655

    • NLM

      Stegerer D, Pracht M, Günther FS, Sun H, Preis K, Zerson M, Maftuhin W, Tan WL, Kroon R, McNeill CR, Fabiano S, Walter M, Biskup T, Gemming S, Magerle R, Müller C, Sommer M. Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state [Internet]. Macromolecules. 2022 ; 55( 12): 4979-4994 + supporting information: 1-36.[citado 2024 maio 09 ] Available from: https://doi.org/10.1021/acs.macromol.2c00655

    • Vancouver

      Stegerer D, Pracht M, Günther FS, Sun H, Preis K, Zerson M, Maftuhin W, Tan WL, Kroon R, McNeill CR, Fabiano S, Walter M, Biskup T, Gemming S, Magerle R, Müller C, Sommer M. Organogels from diketopyrrolopyrrole copolymer ionene/polythiophene blends exhibit ground-state single electron transfer in the solid state [Internet]. Macromolecules. 2022 ; 55( 12): 4979-4994 + supporting information: 1-36.[citado 2024 maio 09 ] Available from: https://doi.org/10.1021/acs.macromol.2c00655

  • Artigo de periodico

    Real-space numerical renormalization group computation of transport properties in side-coupled geometry (2022)

    Ferrari, Ana Luiza Rodrigues Ferreira; Oliveira, Luiz Nunes de

    Source: Physical Review B. Unidade: IFSC

    Subjects: EFEITO KONDO, MÉTODOS NUMÉRICOS, SEMICONDUTORES

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      FERRARI, Ana Luiza Rodrigues Ferreira e OLIVEIRA, Luiz Nunes de. Real-space numerical renormalization group computation of transport properties in side-coupled geometry. Physical Review B, v. 106, n. 7, p. 075129-1-075129-34, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.106.075129. Acesso em: 09 maio 2024.

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      Ferrari, A. L. R. F., & Oliveira, L. N. de. (2022). Real-space numerical renormalization group computation of transport properties in side-coupled geometry. Physical Review B, 106( 7), 075129-1-075129-34. doi:10.1103/PhysRevB.106.075129

    • NLM

      Ferrari ALRF, Oliveira LN de. Real-space numerical renormalization group computation of transport properties in side-coupled geometry [Internet]. Physical Review B. 2022 ; 106( 7): 075129-1-075129-34.[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.106.075129

    • Vancouver

      Ferrari ALRF, Oliveira LN de. Real-space numerical renormalization group computation of transport properties in side-coupled geometry [Internet]. Physical Review B. 2022 ; 106( 7): 075129-1-075129-34.[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.106.075129

  • Artigo de periodico

    Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides (2022)

    Darriba, G N ; Muñoz, Emiliano L ; Richard, Diego ; Ayala, A P; Carbonari, A W ; Petrilli, Helena Maria ; Renteria, M

    Source: Physical Review B. Unidade: IF

    Assunto: SEMICONDUTORES

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    • ABNT

      DARRIBA, G N et al. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, v. 105, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevB.105.195201. Acesso em: 09 maio 2024.

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      Darriba, G. N., Muñoz, E. L., Richard, D., Ayala, A. P., Carbonari, A. W., Petrilli, H. M., & Renteria, M. (2022). Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides. Physical Review B, 105. doi:10.1103/PhysRevB.105.195201

    • NLM

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

    • Vancouver

      Darriba GN, Muñoz EL, Richard D, Ayala AP, Carbonari AW, Petrilli HM, Renteria M. Insights into the aftereffects phenomenon in solids based on DFT and time-differential perturbed γ−γ angular correlation studies in 111In (→ 111Cd)-doped tin oxides [Internet]. Physical Review B. 2022 ; 105[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevB.105.195201

  • Trabalho de evento-resumo periodico

    Fresh look on finite-size effects in Majorana nanowires (2022)

    Dourado, Rodrigo de Abreu ; Egues, José Carlos ; Penteado, Poliana Heiffig

    Source: Bulletin of the American Physical Society. Conference titles: APS March Meeting. Unidade: IFSC

    Subjects: SEMICONDUTORES, SPIN, FÍSICA DA MATÉRIA CONDENSADA

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      DOURADO, Rodrigo de Abreu e EGUES, José Carlos e PENTEADO, Poliana Heiffig. Fresh look on finite-size effects in Majorana nanowires. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Disponível em: https://meetings/Meeting/MAR22/Session/K65.7. Acesso em: 09 maio 2024. , 2022

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      Dourado, R. de A., Egues, J. C., & Penteado, P. H. (2022). Fresh look on finite-size effects in Majorana nanowires. Bulletin of the American Physical Society. College Park: American Physical Society - APS. Recuperado de https://meetings/Meeting/MAR22/Session/K65.7

    • NLM

      Dourado R de A, Egues JC, Penteado PH. Fresh look on finite-size effects in Majorana nanowires [Internet]. Bulletin of the American Physical Society. 2022 ; 67( 3):[citado 2024 maio 09 ] Available from: https://meetings/Meeting/MAR22/Session/K65.7

    • Vancouver

      Dourado R de A, Egues JC, Penteado PH. Fresh look on finite-size effects in Majorana nanowires [Internet]. Bulletin of the American Physical Society. 2022 ; 67( 3):[citado 2024 maio 09 ] Available from: https://meetings/Meeting/MAR22/Session/K65.7

  • Artigo de periodico

    Excitonic effects in graphene-like C3N (2022)

    Bonacci, Miki ; Zanfrognini, Matteo ; Molinari, Elisa ; Ruini, Alice; Caldas Marilia Junqueira ; Ferretti, Andrea ; Varsano, Daniele

    Source: Physical Review Materials. Unidade: IF

    Assunto: SEMICONDUTORES

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    • ABNT

      BONACCI, Miki et al. Excitonic effects in graphene-like C3N. Physical Review Materials, v. 6, n. 3, 2022Tradução . . Disponível em: https://doi.org/10.1103/PhysRevMaterials.6.034009. Acesso em: 09 maio 2024.

    • APA

      Bonacci, M., Zanfrognini, M., Molinari, E., Ruini, A., Caldas Marilia Junqueira,, Ferretti, A., & Varsano, D. (2022). Excitonic effects in graphene-like C3N. Physical Review Materials, 6( 3). doi:10.1103/PhysRevMaterials.6.034009

    • NLM

      Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas Marilia Junqueira, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009

    • Vancouver

      Bonacci M, Zanfrognini M, Molinari E, Ruini A, Caldas Marilia Junqueira, Ferretti A, Varsano D. Excitonic effects in graphene-like C3N [Internet]. Physical Review Materials. 2022 ; 6( 3):[citado 2024 maio 09 ] Available from: https://doi.org/10.1103/PhysRevMaterials.6.034009

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